Description
Charactiristics IRF1407 MOSFET transistor
Type: n-channel
Drain-to-Source Breakdown Voltage: 75 V
Gate-to-Source Voltage, max: ±20 V
Drain-Source On-State Resistance, max: 7.800 Ohm
Continuous Drain Current: 130 A
Total Gate Charge: 160 nC
Power Dissipation: 330 W
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