Description
N3055 Features and Specifications
- Medium power transistor
- Excellent safe operating area
- Complementary NPN – PNP transistors
- Low collector-emitter saturation voltage
- Pb−free packages are available
- DC current gain (hFE) up to 70
- With hfe improved linearity
- Maximum voltage across collector and emitter: 60V DC
- Maximum current allowed trough collector: 15A DC
- Maximum voltage across base and emitter: 7V DC
- Maximum current allowed through base: 7A DC
- Maximum voltage across collector and base: 100V DC
- Operating temperature range: -65ºC to +200ºC
- Total power dissipation: 115W
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