Description
The power transistor is a three-terminal semiconductor device used to amplify and switch electronic signals and electrical power. It is a junction transistor designed to handle high current and power; used chiefly in audio and switching circuits.
Specifications:
- Polarity: PNP
- Pins: 3
- Material: Silicon
- Maximum Collector Power Dissipation (Pc): 100 W
- Maximum Collector-
-
- Base
Voltage |Vcb|: -140 V
- Maximum Collector-
- Emitter
Voltage |Vce|: -140 V
-
- Maximum
- Emitter
–
-
- Base
Voltage |Veb|: -5 V
- Maximum Collector Current |Ic max|: -10 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 30 MHz
- Collector Capacitance (Cc): 480 pF
- Forward Current Transfer Ratio (hFE), MIN: 55
- Dimension: 15.5×20.0×4.5
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